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IS43TR85120A - 4Gb DDR3 SDRAM

Download the IS43TR85120A datasheet PDF. This datasheet also covers the IS46TR16256A variant, as both devices belong to the same 4gb ddr3 sdram family and are provided as variant models within a single manufacturer datasheet.

Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
  • High speed data transfer rates with system frequency up to 1066 MHz.
  • 8 internal banks for concurrent operation.
  • 8n-Bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Bu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS46TR16256A-ISSI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS43TR85120AL 4Gb DDR3 SDRAM
IS43TR85120B 4Gb DDR3 SDRAM
IS43TR85120BL 4Gb DDR3 SDRAM
IS43TR85120EC 4Gb DDR3 SDRAM
IS43TR85120ECL 4Gb DDR3 SDRAM

Full PDF Text Transcription

Click to expand full text
IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 1066 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) SEPTEMBER 2016  Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.
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