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IS43TR16256EC - 4Gb DDR3 SDRAM

Download the IS43TR16256EC datasheet PDF. This datasheet also covers the IS46TR16256EC variant, as both devices belong to the same 4gb ddr3 sdram family and are provided as variant models within a single manufacturer datasheet.

Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
  • 8 internal banks for concurrent operation.
  • 8n-Bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Burst Sequence: Sequential or Interleave.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS46TR16256EC-ISSI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS43TR16256ECL 4Gb DDR3 SDRAM
IS43TR16256A 4Gb DDR3 SDRAM
IS43TR16256AL 4Gb DDR3 SDRAM
IS43TR16256B 4Gb DDR3 SDRAM
IS43TR16256BL 4Gb DDR3 SDRAM

Full PDF Text Transcription

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IS43/46TR16256EC, IS43/46TR16256ECL, IS43/46TR85120EC, IS43/46TR85120ECL 512Mx8, 256Mx16 4Gb DDR3 SDRAM with On-Chip ECC FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture • Programmable CAS Latency • Programmable Additive Latency: 0, CL-1,CL-2 • Programmable CAS WRITE latency (CWL) based on tCK • Programmable Burst Length: 4 and 8 • Programmable Burst Sequence: Sequential or Interleave • BL switch on the fly • Auto Self Refresh(ASR) • Self Refresh Temperature(SRT) • Refresh Interval: 7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 µs (8192 cycles/32 ms) Tc= 85°C to 95°C 1.95 µs (8192 cycles/16 ms) Tc= 95°C to 105°C 0.
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