IRGPH50S - INSULATED GATE BIPOLAR TRANSISTOR

IRF

IRGPH50S Datasheet Preview — Preview of IRGPH50S PDF

Datasheet Details

Part number	IRGPH50S
Manufacturer	IRF
File Size	96.85 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPH50S_IRF.pdf

IRGPH50S Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 1200V VCE(sat) ≤ 2.0V @VGE = 15V, IC = 33A n-channel.

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Published: Aug 23, 2005 |