Description
PD - 9.1658A PRELIMINARY IRFR/U9214 HEXFET® Power MOSFET D l l l l l l P-Channel Surface Mount (IRFR9214) Straight Lead (IRFU9214) Advanced Proces.
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area.
Features
* 0) M A M B NOT ES:
0.58 (.023) 0.46 (.018)
2.28 (.090) 4.57 (.180)
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS ION : INCH. 3 CO NFO RMS T O JEDE C O UTLINE TO -252AA . 4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP , SO LDER DIP MA X. +0.16 (.006). Part M
Applications
* The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P a k T O -2 52 A