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IRFSL3507 - HEXFET Power MOSFET

IRF

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Datasheet Details

Part number	IRFSL3507
Manufacturer	IRF
File Size	413.41 KB
Description	HEXFET Power MOSFET
Datasheet	IRFSL3507_IRF.pdf

IRFSL3507 Product details

Features

ccounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3.
BV.
Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
BV.
Zth] EAS (AR) = PD (ave).

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Published: Aug 16, 2005 |