Datasheet4U.com

IRFS4410 - Power MOSFET

IRF

📥 Download Datasheet

IRFS4410 Datasheet Preview — Preview of IRFS4410 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IRFS4410
Manufacturer	IRF
File Size	409.06 KB
Description	Power MOSFET
Datasheet	IRFS4410_IRF.pdf

IRFS4410 Product details

Features

ve) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) F.

📁 IRFS4410 Similar Datasheet

IRFS4410PbF - HEXFET Power MOSFET (International Rectifier)
IRFS4410Z - N-Channel MOSFET (INCHANGE)
IRFS4410ZPbF - Power MOSFET (International Rectifier)
IRFS440 - Power MOSFET (Fairchild Semiconductor)
IRFS440A - N-Channel MOSFET (Inchange Semiconductor)
IRFS440B - 500V N-Channel MOSFET (Fairchild)
IRFS4010 - N-Channel MOSFET (INCHANGE)
IRFS4010-7PPbF - Power MOSFET (International Rectifier)

Other Datasheets by IRF

IRFS41N15D - Power MOSFET
IRFS4310 - Power MOSFET
IRFS4610 - Power MOSFET
IRFS4710 - Power MOSFET
IRFS11N50A - SMPS MOSFET
IRFS17N20D - Power MOSFET

Published: Aug 16, 2005 |