IRFS4410 Datasheet (IRF)

IRFS4410, Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96902A IRFB4410 IRFS4410 IRFSL4410 HEXFET® Power MOSFET D VDSS RDS(on) typ.

max.

S ID 100V 8.0m: 10m: 96A G DS TO-220AB IRFB4410 G DS D2Pak IRFS4410 G

IRFS4410 Features

* ve) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav =