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TTC5200 - NPN Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) Complement to Type TTA1943

and reliable operation.

Power amplifier applications Recommended for 100W high fidelity audio frequency amplif

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type TTA1943 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTC5200 isc website： www.iscsemi.
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