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TST30H100CW Schottky Barrier Rectifier

TST30H100CW Description

Schottky Barrier Rectifier INCHANGE Semiconductor TST30H100CW .

TST30H100CW Features

* Plastic material used carriers Underwriter Laboratory
* Metal silicon junction, majority carrier conduction
* Low Power Loss,high Efficiency
* Guard ring for overvoltage protection
* High Surge Capability,High Current Capability
* Minimum Lot-to-Lot variations for robust device p

TST30H100CW Applications

* For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified

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Datasheet Details

Part number
TST30H100CW
Manufacturer
INCHANGE
File Size
184.02 KB
Datasheet
TST30H100CW-INCHANGE.pdf
Description
Schottky Barrier Rectifier

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Schottky Barrier Rectifier INCHANGE
INCHANGE TST30H100CW-like datasheet