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TK6A60W N-Channel MOSFET

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Description

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK6A60W,ITK6A60W *.

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Datasheet Specifications

Part number
TK6A60W
Manufacturer
INCHANGE
File Size
248.20 KB
Datasheet
TK6A60W-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Low drain-source on-resistance: RDS(ON) = 0.68Ω (typ. )
* Easy to control Gate switching
* Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.31mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Sw

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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