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TK4R3A06PL N-Channel MOSFET

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Description

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK4R3A06PL,ITK4R3A06PL *.

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Datasheet Specifications

Part number
TK4R3A06PL
Manufacturer
INCHANGE
File Size
248.48 KB
Datasheet
TK4R3A06PL-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Low drain-source on-resistance: RDS(ON) = 3.3mΩ (typ. ) (VGS = 10 V)
* Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.5mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulato

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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