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TK12P60W N-Channel MOSFET

TK12P60W Description

Isc N-Channel MOSFET Transistor TK12P60W *.

TK12P60W Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

TK12P60W Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 11.5 IDM Drain Current-Single Pulsed 46 PD Total Dissipation @TC=25℃ 100 Tch Max. Operating Junction Te

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Datasheet Details

Part number
TK12P60W
Manufacturer
INCHANGE
File Size
258.54 KB
Datasheet
TK12P60W-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE TK12P60W-like datasheet