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TIP137 - PNP Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A Complement to Type TIP132 Minimum Lot-to-Lot variations for robust device performance an

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isc Silicon PNP Darlington Power Transistor TIP137 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.
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