Datasheet4U Logo Datasheet4U.com

STW19NM60N N-Channel MOSFET

STW19NM60N Description

isc N-Channel Mosfet Transistor *.

STW19NM60N Features

* Drain Current ID= 13A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STW19NM60N Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 13 A IDM Pulse Drain Current 52 A Ptot Total Dissipation@TC=25℃ 110 W Tj Max. Oper

📥 Download Datasheet

Preview of STW19NM60N PDF
datasheet Preview Page 2

Datasheet Details

Part number
STW19NM60N
Manufacturer
INCHANGE
File Size
371.22 KB
Datasheet
STW19NM60N-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • STW19NM65N - Power MOSFET (STMicroelectronics)
  • STW19NM50N - N-channel Power MOSFETs (STMicroelectronics)
  • STW10N105K5 - N-channel Power MOSFET (STMicroelectronics)
  • STW10N95K5 - N-channel Power MOSFET (STMicroelectronics)
  • STW10NA50 - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR (ST Microelectronics)
  • STW10NB60 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STW10NC60 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STW10NC70Z - N-CHANNEL Power MOSFET (ST Microelectronics)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE STW19NM60N-like datasheet