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STP12NM50FP N-Channel MOSFET

STP12NM50FP Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP12NM50FP *.

STP12NM50FP Features

* Drain-source on-resistance: RDS(on) ≤ 0.35Ω@10V
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STP12NM50FP Applications

* Be suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM D

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Datasheet Details

Part number
STP12NM50FP
Manufacturer
INCHANGE
File Size
217.33 KB
Datasheet
STP12NM50FP-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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