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STP10NM60ND Datasheet - INCHANGE

STP10NM60ND, N-Channel MOSFET

Isc N-Channel MOSFET Transistor STP10NM60ND *.
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STP10NM60ND-INCHANGE.pdf

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Datasheet Details

Part number:

STP10NM60ND

Manufacturer:

INCHANGE

File Size:

252.24 KB

Description:

N-Channel MOSFET

Features

* With TO-220 package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 8 5 A IDM Drain Current-Single Pulsed 32 A PD Total Dissipation @TC=25℃ 70

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