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STH80N10F7-2 N-Channel MOSFET

STH80N10F7-2 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STH80N10F7-2 *.

STH80N10F7-2 Features

* Extremely low gate charge
* Ultra low on-resistance
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STH80N10F7-2 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 80 54 A IDM Drain Current-Single Pulsed 320 A PD Total Dissipation 110 W T

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Datasheet Details

Part number
STH80N10F7-2
Manufacturer
INCHANGE
File Size
236.92 KB
Datasheet
STH80N10F7-2-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE STH80N10F7-2-like datasheet