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STD7N80K5 N-Channel MOSFET

STD7N80K5 Description

isc N-Channel MOSFET Transistor *.

STD7N80K5 Features

* Static drain-source on-resistance: RDS(on)≤1.2Ω
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

STD7N80K5 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature 150 Tstg Storage Tem

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Datasheet Details

Part number
STD7N80K5
Manufacturer
INCHANGE
File Size
239.58 KB
Datasheet
STD7N80K5-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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