STD7N80K5 Datasheet - INCHANGE

STD7N80K5, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* Static drain-source on-resistance: RDS(on)≤1.2Ω
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature 150 Tstg Storage Tem

STD7N80K5-INCHANGE.pdf