STD3NM60N Datasheet - INCHANGE

STD3NM60N, N-Channel MOSFET

Isc N-Channel MOSFET Transistor *

Features

* Drain Current
* ID= 3.3A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max)
* 100% avalanche tested
* Low input capacitance and gate charge
* Minimum Lot-to-Lot variations for robust device performance and reliable o

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGSS Drain-Source Voltage Gate-Source Voltage 600 V ±25 V ID Drain Current-Continuous@TC=25℃ 3.3 A IDM Drain Current-Single Pulsed PD Total Dissipation 13 A 50 W Tj Operating J

STD3NM60N-INCHANGE.pdf