STD11NM60N-1 Datasheet - INCHANGE

STD11NM60N-1, N-Channel MOSFET

isc N-Channel Mosfet Transistor *

Features

* Drain Current ID= 10A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 10 A IDM Pulse Drain Current 40 A Ptot Total Dissipation@TC=25℃ 90 W Tj Max. Opera

STD11NM60N-1-INCHANGE.pdf