STB35N65M5 Datasheet - INCHANGE

STB35N65M5, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor STB35N65M5
* APP

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 27 17 108 PD Total Dissipation 160 Tj Operat

STB35N65M5-INCHANGE.pdf