STB28NM50N Datasheet - INCHANGE

STB28NM50N, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor STB28NM50N
* APP

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 21 13 84 PD Total Dissipation 150 Tj Operati

STB28NM50N-INCHANGE.pdf