STB26NM60ND - N-Channel MOSFET

INCHANGE

STB26NM60ND Datasheet Preview — Preview of STB26NM60ND PDF

Datasheet Details

Part number	STB26NM60ND
Manufacturer	INCHANGE
File Size	265.25 KB
Description	N-Channel MOSFET
Datasheet	STB26NM60ND-INCHANGE.pdf

STB26NM60ND Product details

Description

Low Drain-Source On-Resistance APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±25 V 21 A 84 A 190 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance

Features

Drain Current.
ID=21A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 175mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 4, 2020 |