STB24NM60N Datasheet - INCHANGE

STB24NM60N, N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB24NM60N *

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±30 17 11 68 PD Total Dissipation @TC=25℃ 125 Tch Max. Operating J

STB24NM60N-INCHANGE.pdf