STB23NM60ND Datasheet - INCHANGE

STB23NM60ND, N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB23NM60ND *

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±25 20 12.6 80 PD Total Dissipation @TC=25℃ 150 Tch Max. Operating

STB23NM60ND-INCHANGE.pdf