STB16N65M5 Datasheet - INCHANGE

STB16N65M5, N-Channel MOSFET

isc N-Channel Mosfet Transistor *

Features

* Drain Current ID= 12A@ TC=25℃
* Drain Source Voltage- : VDSS= 650V(Min)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 12 A IDM Pulse Drain Current 48 A Ptot Total Dissipation@TC=25℃ 90 W Tj Max. Opera

STB16N65M5-INCHANGE.pdf