STB130N6F7-2 Datasheet - INCHANGE

STB130N6F7-2, N-Channel MOSFET

Isc N-Channel MOSFET Transistor *

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current-ContinuousTc=25℃ 80 A IDM Drain Current-Single Pulsed 320 A PD Total Dissipation @TC=25℃ 160 W Tch M

STB130N6F7-2-INCHANGE.pdf