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STB130N6F7-2 N-Channel MOSFET

STB130N6F7-2 Description

Isc N-Channel MOSFET Transistor *.

STB130N6F7-2 Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STB130N6F7-2 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current-ContinuousTc=25℃ 80 A IDM Drain Current-Single Pulsed 320 A PD Total Dissipation @TC=25℃ 160 W Tch M

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Datasheet Details

Part number
STB130N6F7-2
Manufacturer
INCHANGE
File Size
246.80 KB
Datasheet
STB130N6F7-2-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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