SPW20N60CFD N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor SPW20N60CFD, ISPW20N60CFD *.
High peak current capability. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source.

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Datasheet Specifications

Part number: SPW20N60CFD
Manufacturer: INCHANGE
File Size: 241.10 KB
Datasheet: SPW20N60CFD-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤220mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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SPW20N60CFD N-Channel MOSFET INCHANGE

INCHANGE SPW20N60CFD-like datasheet