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SPU04N60C3 N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
SPU04N60C3
Manufacturer
INCHANGE
File Size
203.93 KB
Datasheet
SPU04N60C3-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With To-251(IPAK) package
* New revolutionary high voltage technology
* Ultra low gate charge
* High peak current capability
* Improved transconductance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semic

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±30 4.5 2.8 13.5 PD Total Dissipation @TC=25℃ 50 Tch Max. Operatin

SPU04N60C3 Distributors

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