SPP24N60C3 - N-Channel MOSFET

INCHANGE

SPP24N60C3 Datasheet Preview — Preview of SPP24N60C3 PDF

Datasheet Details

Part number	SPP24N60C3
Manufacturer	INCHANGE
File Size	242.77 KB
Description	N-Channel MOSFET
Datasheet	SPP24N60C3-INCHANGE.pdf

SPP24N60C3 Product details

Description

Ultra low gate charge Ultra low effective capacitance Improved transconductance ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 24.3 IDM Drain Current-Single Pulsed 72.9 PD Total Dissipation @TC=25℃ 240 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c)

Features

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Static drain-source on-resistance: RDS(on) ≤0.16Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 14, 2020 |