SPP06N60C3 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor SPP06N60C3，ISPP06N60C3 *.
Ultra low gate charge. High peak current capability. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volt.

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Datasheet Specifications

Part number: SPP06N60C3
Manufacturer: INCHANGE
File Size: 243.49 KB
Datasheet: SPP06N60C3-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤0.75Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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SPP06N60C3 N-Channel MOSFET INCHANGE

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