SPB80P06P P-Channel MOSFET

INCHANGE

SPB80P06P Description

isc P-Channel MOSFET Transistor *.

SPB80P06P Features

* Static drain-source on-resistance: RDS(on)≤23mΩ(@VGS= -10V; ID= -64A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPB80P06P Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -80 PD Total Dissipation @TC=25℃ 340 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Te

📥 Download Datasheet

SPB80P06P Datasheet Preview — Preview of SPB80P06P PDF

Datasheet Details

Part number: SPB80P06P
Manufacturer: INCHANGE
File Size: 249.23 KB
Datasheet: SPB80P06P-INCHANGE.pdf
Description: P-Channel MOSFET

📁 Related Datasheet

SPB80P06PG - Power Transistor (Infineon)
SPB80N03 - SIPMOS Power Transistor (Siemens Semiconductor Group)
SPB80N03L - Power Transistor (Siemens)
SPB80N03S2-03 - OptiMOS Power-Transistor (Infineon Technologies)
SPB80N03S2L-03 - OptiMOS Power-Transistor (Infineon Technologies)
SPB80N03S2L-04 - OptiMOS Power-Transistor (Infineon Technologies)
SPB80N03S2L-05 - OptiMOS Power-Transistor (Infineon Technologies)
SPB80N03S2L-06 - OptiMOS Power-Transistor (Infineon Technologies)

📌 All Tags

P-Channel MOSFET INCHANGE

INCHANGE SPB80P06P-like datasheet

SPB02N60C3 - N-Channel MOSFET
SPB02N60S5 - N-Channel MOSFET
SPB03N60C3 - N-Channel MOSFET
SPB04N50C3 - N-Channel MOSFET
SPB04N60C3 - N-Channel MOSFET
SPB04N60S5 - N-Channel MOSFET