Datasheet4U Logo Datasheet4U.com

SMK0990CI - N-Channel MOSFET

SMK0990CI Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SMK0990CI *.

SMK0990CI Features

* New revolutionary high voltage technology
* With TO-3PN package
* Drain-Source breakdown voltage:BVDSS=900V(Min. )
* Low drain-source On resistance: RDS(on)=1.4Ω (Max. )
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SMK0990CI Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 9 5.7 36 PD Total Dissipation 130 Tj Operating Junction Temper

📥 Download Datasheet

Preview of SMK0990CI PDF
datasheet Preview Page 2

Datasheet Details

Part number
SMK0990CI
Manufacturer
INCHANGE
File Size
231.43 KB
Datasheet
SMK0990CI-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • SMK0990FD - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
  • SMK0965F - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
  • SMK0965FC - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
  • SMK0965FJ - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
  • SMK0160 - Advanced N-Ch Power MOSFET (KODENSHI)
  • SMK0160D - Advanced N-Ch Power MOSFET (AUK)
  • SMK0160I - Advanced N-Ch Power MOSFET (AUK)
  • SMK0160IS - Advanced N-Ch Power MOSFET (KODENSHI KOREA)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE SMK0990CI-like datasheet