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RJ1G08CGN N-Channel MOSFET

RJ1G08CGN Description

isc N-Channel MOSFET Transistor RJ1G08CGN .
Designed for use in switch mode power supplies and general purpose applications.

RJ1G08CGN Features

* Drain Current
* ID= 80A@ TC=25℃
* Drain Source Voltage- : VDSS=40V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 5.6mΩ(Max)
* 100% avalanche tested

RJ1G08CGN Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pluse 160 A PD Total Dissipation @TC=25℃ 78 W TJ Max. Operating Junction Temperatu

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Datasheet Details

Part number
RJ1G08CGN
Manufacturer
INCHANGE
File Size
250.09 KB
Datasheet
RJ1G08CGN-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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