Datasheet4U Logo Datasheet4U.com

R6020ENX N-Channel MOSFET

R6020ENX Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor R6020ENX *.

R6020ENX Features

* Drain-source on-resistance: RDS(on) ≤ 0.196Ω@10V
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

R6020ENX Applications

* High fast switching Power Supply
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Juncti

📥 Download Datasheet

Preview of R6020ENX PDF
datasheet Preview Page 2

Datasheet Details

Part number
R6020ENX
Manufacturer
INCHANGE
File Size
217.19 KB
Datasheet
R6020ENX-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • R6020ENZ - Power MOSFET (ROHM)
  • R6020422 - Fast Recovery Rectifier (Powerex Power Semiconductors)
  • R6020425 - Fast Recovery Rectifier (Powerex Power Semiconductors)
  • R6020435 - Fast Recovery Rectifier (Powerex Power Semiconductors)
  • R6020622 - Fast Recovery Rectifier (Powerex Power Semiconductors)
  • R6020625 - Fast Recovery Rectifier (Powerex Power Semiconductors)
  • R6020635 - Fast Recovery Rectifier (Powerex Power Semiconductors)
  • R6020822 - Fast Recovery Rectifier (Powerex Power Semiconductors)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE R6020ENX-like datasheet