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R6020ENX N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor R6020ENX *.

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Datasheet Specifications

Part number
R6020ENX
Manufacturer
INCHANGE
File Size
217.19 KB
Datasheet
R6020ENX-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain-source on-resistance: RDS(on) ≤ 0.196Ω@10V
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* High fast switching Power Supply
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Juncti

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