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Q3-2 - NPN Power Transistor

Description

High Voltage: VCEV= 400V(Min) Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS

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    isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.
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