With TO-3PN packaging
Reliable performance at higher powers
Accurate reproduction of Input signal
Greater dynamic range
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Switching regulators
High frequency inverters
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isc Silicon NPN Power Transistors
DESCRIPTION ·With TO-3PN packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
80
VCEO
Collector-Emitter Voltage
80
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
10
ICM
Collector Current-Peak
20
PT
Total Power Dissipation @ TC=25℃
120
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resist
NJW44H11G Datasheet
