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MJE520 - NPN Transistor

Description

High Collector Current-IC= 3.0A High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) Good Linearity of hFE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier appl

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 3.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 25 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJE520 isc website：www.iscsemi.
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