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MJ3041 - NPN Transistor

Description

High DC Current Gain Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

and switching regulator applications.

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Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated amplifier series pass and switching regulator applications.
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