Datasheet4U Logo Datasheet4U.com

MJ12020 - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – MJ12020

Datasheet Details

Part number MJ12020
Manufacturer INCHANGE
File Size 202.34 KB
Description NPN Transistor
Datasheet download datasheet MJ12020 Datasheet
Additional preview pages of the MJ12020 datasheet.

Product details

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high resolution video systems, such as : high density graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V

📁 Similar Datasheet

  • MJ12002 - 2.5 Amp NPN Silicon Power Transistor (Motorols)
  • MJ12003 - 4 Amp NPN Silicon Power Transistor (Motorols)
  • MJ12005D - 8 Amp NPN Silicon Power Transistor (Motorols)
  • MJ12010 - NPN Silicon Transistor (Central Semiconductor)
  • MJ1250 - 10 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ1000 - Medium-Power Complementary Silicon Transistors (Motorola Inc)
  • MJ10000 - 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS (Motorola Inc)
  • MJ10001 - NPN Silicon Transistor (Wing Shing Computer Components)
Other Datasheets by INCHANGE
Published: |