Datasheet4U Logo Datasheet4U.com

MJ11033 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A Complement to the NPN MJ11032 APPLICATIONS

general purpose amplifier applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJ11033 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS Motorola
MJ11033 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS ON
MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR Seme LAB
MJ11033 Power Transistor DIGITRON
MJ11033 Silicon PNP Transistor NTE

Other Datasheets by Inchange Semiconductor

Part Number Description
MJ11030 NPN Transistor
MJ11031 PNP Transistor
MJ11032 NPN Transistor
MJ11011 PNP Transistor
MJ11012 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification MJ11033 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to the NPN MJ11032 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
Published: |