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MFT60N12T22FS - N-Channel MOSFET

Description

Drain Current ID=12A@ TC=25℃ Drain Source Voltage- : VDSS=600V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed s

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    isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
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