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isc Thyristors
INCHANGE Semiconductor
MCR106-6
FEATURES ·Low Thermal Resistance ·High Heat Dissipation and Durability ·Designed for high volume consumer applications such as
temperature, light and speed control; process and remote control, and warning systems and etc. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak off-state voltage
IT(AV) Average on-state current TC=93℃
IT(RMS) on-state RMScurrent TC=93℃
PGM Peak gate power TC=93℃
PG(AV) Average gate power TC=93℃
Tj
Operating junction temperature
Tstg Storage temperature
MIN
UNIT
400
V
400
V
2.55
A
4
A
0.5
W
0.