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IXTQ60N10T - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IXTQ60N10T
Manufacturer	INCHANGE
File Size	252.46 KB
Description	N-Channel MOSFET
Datasheet	IXTQ60N10T-INCHANGE.pdf

IXTQ60N10T Product details

Features

Drain Source Voltage- : VDSS= 200V(Min).
Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 20, 2020 |