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IXTP1R4N60P - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IXTP1R4N60P
Manufacturer	INCHANGE
File Size	247.18 KB
Description	N-Channel MOSFET
Datasheet	IXTP1R4N60P-INCHANGE.pdf

IXTP1R4N60P Product details

Features

Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 16, 2020 |