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IXTH180N10T - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IXTH180N10T
Manufacturer	INCHANGE
File Size	335.46 KB
Description	N-Channel MOSFET
Datasheet	IXTH180N10T-INCHANGE.pdf

IXTH180N10T Product details

Features

Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 12, 2020 |