Datasheet4U Logo Datasheet4U.com

IRFZ44ES - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-263(D2PAK) packaging.
  • Uninterruptible power supply.
  • High speed switching.
  • Hard switched and high frequency circuits.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

📥 Download Datasheet

Datasheet preview – IRFZ44ES

Datasheet Details

Part number IRFZ44ES
Manufacturer INCHANGE
File Size 200.91 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFZ44ES Datasheet
Additional preview pages of the IRFZ44ES datasheet.

📁 Similar Datasheet

  • IRFZ44ES - Power MOSFET (International Rectifier)
  • IRFZ44ESPBF - Power MOSFET (International Rectifier)
  • IRFZ44E - Power MOSFET (International Rectifier)
  • IRFZ44EL - Power MOSFET (International Rectifier)
  • IRFZ44ELPBF - Power MOSFET (International Rectifier)
  • IRFZ44EPBF - Power MOSFET (International Rectifier)
  • IRFZ44 - Power MOSFET (International Rectifier)
  • IRFZ44 - Power MOSFET (Fairchild)
  • IRFZ44 - Power MOSFET (Vishay)
  • IRFZ44 - N-Channel Trench Power MOSFET (Thinki Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IRFZ44ES ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 48 34 192 PD Total Dissipation 110 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-am
Published: |