IRFSL59N10D N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFSL59N10D *.

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Datasheet Specifications

Part number: IRFSL59N10D
Manufacturer: INCHANGE
File Size: 272.46 KB
Datasheet: IRFSL59N10D-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤0.025Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 59 A IDM Drain Current-Single Pulsed 236 A PD Total Dissipation @TC=25℃ 200 W Tj Max. Operating Junction Temperature

IRFSL59N10D Distributors

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IRFSL59N10D N-Channel MOSFET INCHANGE

INCHANGE IRFSL59N10D-like datasheet