IRFR9024N - P-Channel MOSFET

INCHANGE

Datasheet Details

Static drain-source on-resistance: RDS(on)≤175mΩ(@VGS= -10V; ID= -6.6A).
Advanced trench process technology.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 30, 2020 |