Datasheet4U.com

IRFBE30 - N-Channel MOSFET

INCHANGE

📥 Download Datasheet

IRFBE30 Datasheet Preview — Preview of IRFBE30 PDF

datasheet Preview Page 2

Datasheet Details

Part number	IRFBE30
Manufacturer	INCHANGE
File Size	279.38 KB
Description	N-Channel MOSFET
Datasheet	IRFBE30-INCHANGE.pdf

IRFBE30 Product details

Features

Low drain-source on-resistance: RDS(ON) =3.0Ω (MAX).
Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 IRFBE30 Similar Datasheet

IRFBE30L - Power MOSFET (Vishay)
IRFBE30LPBF - HEXFET Power MOSFET (International Rectifier)
IRFBE30S - Power MOSFET (Vishay)
IRFBE30SPBF - HEXFET Power MOSFET (International Rectifier)
IRFBE20 - Power MOSFET (VBsemi)
IRFB11N50 - Power MOSFET (International Rectifier)
IRFB11N50A - Power MOSFET (Vishay)
IRFB11N50APBF - SMPS MOSFET (International Rectifier)

Other Datasheets by INCHANGE

IRFBE30PBF - N-Channel MOSFET
IRFB13N50A - N-Channel MOSFET
IRFB17N50L - N-Channel MOSFET
IRFB23N15D - N-Channel MOSFET
IRFB260N - N-Channel MOSFET
IRFB3004 - N-Channel MOSFET

Published: Dec 15, 2020 |