IRFB59N10D N-Channel MOSFET

INCHANGE

IRFB59N10D Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB59N10D，IIRFB59N10D *.

IRFB59N10D Features

* Static drain-source on-resistance: RDS(on) ≤0.025Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFB59N10D Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 59 IDM Drain Current-Single Pulsed 236 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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IRFB59N10D Datasheet Preview — Preview of IRFB59N10D PDF

Datasheet Details

Part number: IRFB59N10D
Manufacturer: INCHANGE
File Size: 241.54 KB
Datasheet: IRFB59N10D-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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